SrHfO3 as gate dielectric for future CMOS technology
نویسندگان
چکیده
منابع مشابه
Dual Work Function Metal Gate Technology for Future CMOS Devices
Polycrystalline silicon (poly-Si) has been used as the gate material for MOSFETs for several decades. This is because it is highly compatible with CMOS processing, and its work function can be selectively modified by ion implantation of the appropriate dopants. The gate-depletion effect, which increases the equivalent SiO2 thickness (EOT) of the gate dielectric by several Angstroms and thereby ...
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ژورنال
عنوان ژورنال: Microelectronic Engineering
سال: 2007
ISSN: 0167-9317
DOI: 10.1016/j.mee.2007.04.029